transistor(pnp) features ? high dc c urrent g ain ? high voltage a nd high curren t. ? complementary t o 2s c4116 ? small package applications ? general purpose amplification. m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 50 v v ceo collector - emitter voltage - 50 v v ebo emitter - base voltage - 5 v i c collector current - 150 m a p c collector power dissipation 100 m w r ja thermal resistance fro m j u nction to a mbient 1250 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown volta ge v (br) cbo i c = - 1 0 0 a , i e =0 - 50 v collector - emitter breakdown voltage v (br) c e o i c = - 1 ma, i b =0 - 50 v emitter - base breakdown voltage v (br)eb o i e = - 10 0 a , i c =0 - 5 v collector cut - off current i cbo v cb = - 50 v, i e =0 - 100 n a emitter cut - off current i e bo v eb = - 5 v, i c =0 - 100 n a dc current gain h fe v ce = - 6 v, i c = - 2m a 70 400 collector - emitter saturation voltage v ce(sat) i c = - 100m a, i b = - 10 ma - 0. 3 v transition frequency f t v ce = - 10 v,i c = - 1 ma 80 mhz collector output capacitance c ob v cb = - 10 v, i e =0, f=1mhz 7 pf classification of h fe rank o y gr(g) range 70 C 140 120 C 240 200 C 400 marking so sy sg so t C 3 23 1. base 2. emitter 3. collector 1 date:2011/05 www.htsemi.com semiconductor jinyu 2sa1 58 6
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